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DXTP78030DFGQ-7

DXTP78030DFGQ-7 Diodes Incorporated


DXTP78030DFGQ.pdf
Hersteller: Diodes Incorporated
Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.38 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DXTP78030DFGQ-7 Diodes Incorporated

Description: PWR LOW SAT TRANSISTOR POWERDI33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Transistor Type: PNP, Operating Temperature: -55°C ~ 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A, Current - Collector Cutoff (Max): 300nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V, Frequency - Transition: 315MHz, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Grade: Automotive, Current - Collector (Ic) (Max): 6.5 A, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 2.4 W, Qualification: AEC-Q101.

Weitere Produktangebote DXTP78030DFGQ-7 nach Preis ab 0.33 EUR bis 1.5 EUR

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DXTP78030DFGQ-7 DXTP78030DFGQ-7 Hersteller : Diodes Incorporated DXTP78030DFGQ.pdf Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K
auf Bestellung 1592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.46 EUR
100+0.37 EUR
500+0.35 EUR
1000+0.34 EUR
2000+0.33 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
DXTP78030DFGQ-7 DXTP78030DFGQ-7 Hersteller : Diodes Incorporated DXTP78030DFGQ.pdf Description: PWR LOW SAT TRANSISTOR POWERDI33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 325mA, 6.5A
Current - Collector Cutoff (Max): 300nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 315MHz
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Grade: Automotive
Current - Collector (Ic) (Max): 6.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 2.4 W
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
19+0.93 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.42 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH