DZ600N08KHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 800V 735A PB501-1
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C
Supplier Device Package: BG-PB501-1
Current - Average Rectified (Io): 735A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Bulk
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Technische Details DZ600N08KHPSA1 Infineon Technologies
Description: DIODE GEN PURP 800V 735A PB501-1, Current - Reverse Leakage @ Vr: 40 mA @ 800 V, Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 2200 A, Voltage - DC Reverse (Vr) (Max): 800 V, Part Status: Obsolete, Operating Temperature - Junction: 150°C, Supplier Device Package: BG-PB501-1, Current - Average Rectified (Io): 735A, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Chassis Mount, Package / Case: Module, Packaging: Bulk.