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DZT853-13 Diodes Incorporated

ds30737-89402.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT 1W 100V 6A
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Technische Details DZT853-13 Diodes Incorporated

Description: TRANS NPN 100V 6A SOT223-3, Frequency - Transition: 130MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V, Current - Collector Cutoff (Max): 10nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR), Power - Max: 1 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 6 A, Part Status: Obsolete, Supplier Device Package: SOT-223-3.

Weitere Produktangebote DZT853-13

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DZT853-13 DZT853-13 Diodes Incorporated ds30737.pdf Description: TRANS NPN 100V 6A SOT223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZT853-13 DZT853-13 Diodes Incorporated ds30737.pdf Description: TRANS NPN 100V 6A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DZT853-13 ds30737.pdf
DZT853-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A SOT223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DZT853-13 ds30737.pdf
DZT853-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 100V 6A SOT223-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 6 A
Part Status: Obsolete
Supplier Device Package: SOT-223-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 500mA, 5A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH