E3M0060065K Wolfspeed, Inc.

Description: 60M 650V SIC AUTOMOTIVE MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Tc), Rds On (Max) @ Id, Vgs: 79mOhm @ 13.2A, 15V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 3.6mA, Supplier Device Package: TO-247-4L, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 600 V, Qualification: AEC-Q101.