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Technische Details E3M0120090J Wolfspeed
Description: 900V 120M AUTOMOTIVE SIC MOSFET, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Drain to Source Voltage (Vdss): 900 V, Vgs (Max): +15V, -4V, Drive Voltage (Max Rds On, Min Rds On): 15V, Part Status: Active, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Power Dissipation (Max): 83W (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tube.
Weitere Produktangebote E3M0120090J nach Preis ab 13.52 EUR bis 16.12 EUR
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E3M0120090J | Wolfspeed, Inc. |
 Description: 900V 120M AUTOMOTIVE SIC MOSFETGrade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Drain to Source Voltage (Vdss): 900 V Vgs (Max): +15V, -4V Drive Voltage (Max Rds On, Min Rds On): 15V Part Status: Active Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.5V @ 3mA Power Dissipation (Max): 83W (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Current - Continuous Drain (Id) @ 25°C: 22A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tube |
auf Bestellung 512 Stücke: Lieferzeit 10-14 Tag (e) |
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| E3M0120090J |
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Hersteller: Wolfspeed, Inc.
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
Description: 900V 120M AUTOMOTIVE SIC MOSFET
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V
Drain to Source Voltage (Vdss): 900 V
Vgs (Max): +15V, -4V
Drive Voltage (Max Rds On, Min Rds On): 15V
Part Status: Active
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tube
auf Bestellung 512 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 16.12 EUR |
| 50+ | 13.52 EUR |