auf Bestellung 1111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 15.01 EUR |
| 10+ | 15 EUR |
| 25+ | 14.98 EUR |
| 50+ | 14.2 EUR |
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Technische Details E3M0120090J Wolfspeed
Description: 900V 120M AUTOMOTIVE SIC MOSFET, Packaging: Tube, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V, Power Dissipation (Max): 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: TO-263-7, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +15V, -4V, Drain to Source Voltage (Vdss): 900 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V.
Weitere Produktangebote E3M0120090J nach Preis ab 16.12 EUR bis 23.36 EUR
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E3M0120090J | Hersteller : Wolfspeed, Inc. |
 Description: 900V 120M AUTOMOTIVE SIC MOSFETPackaging: Tube Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 15A, 15V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: TO-263-7 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +15V, -4V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 414 pF @ 600 V |
auf Bestellung 512 Stücke: Lieferzeit 10-14 Tag (e) |
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E3M0120090J | Hersteller : Wolfspeed |
Trans MOSFET N-CH SiC 900V 22A Automotive 8-Pin(7+Tab) TO-263 |
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