E3M0900170D Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.95 EUR |
| 10+ | 4.55 EUR |
| 120+ | 4.15 EUR |
| 510+ | 3.56 EUR |
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Technische Details E3M0900170D Wolfspeed
Description: SIC, MOSFET, 900M, 1700V, TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V, Power Dissipation (Max): 41W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 550µA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV, Qualification: AEC-Q101.
Weitere Produktangebote E3M0900170D nach Preis ab 5.75 EUR bis 10.25 EUR
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E3M0900170D | Wolfspeed, Inc. |
 Description: SIC, MOSFET, 900M, 1700V, TO-247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V Power Dissipation (Max): 41W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 550µA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV Qualification: AEC-Q101 |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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| E3M0900170D |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Qualification: AEC-Q101
Description: SIC, MOSFET, 900M, 1700V, TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Qualification: AEC-Q101
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.25 EUR |
| 30+ | 5.75 EUR |