E3M0900170D Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 8.45 EUR |
| 10+ | 4.75 EUR |
| 120+ | 3.92 EUR |
| 510+ | 3.36 EUR |
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Technische Details E3M0900170D Wolfspeed
Description: SIC, MOSFET, 900M, 1700V, TO-247, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V, Drain to Source Voltage (Vdss): 1700 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-247-3, Vgs(th) (Max) @ Id: 4.5V @ 550µA, Power Dissipation (Max): 41W (Tc), Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V, Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote E3M0900170D nach Preis ab 4.66 EUR bis 9.86 EUR
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E3M0900170D | Wolfspeed, Inc. |
 Description: SIC, MOSFET, 900M, 1700V, TO-247Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V Drain to Source Voltage (Vdss): 1700 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-247-3 Vgs(th) (Max) @ Id: 4.5V @ 550µA Power Dissipation (Max): 41W (Tc) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
auf Bestellung 321 Stücke: Lieferzeit 10-14 Tag (e) |
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| E3M0900170D |
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Hersteller: Wolfspeed, Inc.
Description: SIC, MOSFET, 900M, 1700V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: SIC, MOSFET, 900M, 1700V, TO-247
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 202 pF @ 1.2 kV
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 15 V
Drain to Source Voltage (Vdss): 1700 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4.5V @ 550µA
Power Dissipation (Max): 41W (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 1.99A, 15V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 9.86 EUR |
| 30+ | 5.6 EUR |
| 120+ | 4.66 EUR |