E4D02120E-TR Wolfspeed, Inc.
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Cut Tape (CT)
| Anzahl | Preis |
|---|---|
| 5+ | 3.92 EUR |
| 10+ | 3.26 EUR |
| 100+ | 2.59 EUR |
| 500+ | 2.19 EUR |
| 1000+ | 1.86 EUR |
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Technische Details E4D02120E-TR Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2, Current - Reverse Leakage @ Vr: 50 µA @ 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A, Voltage - DC Reverse (Vr) (Max): 1200 V, Grade: Automotive, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-252-2, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 153pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-252-2, Packaging: Tape & Reel (TR), Qualification: AEC-Q101.
Weitere Produktangebote E4D02120E-TR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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E4D02120E-TR | Wolfspeed, Inc. |
Description: DIODE SIL CARB 1.2KV 8A TO252-2 Current - Reverse Leakage @ Vr: 50 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-252-2 Current - Average Rectified (Io): 8A Capacitance @ Vr, F: 153pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-252-2 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| E4D02120E-TR |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Description: DIODE SIL CARB 1.2KV 8A TO252-2
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 2 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-252-2
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 153pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-252-2
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH