E4M0045075J2-TR Wolfspeed
| Anzahl | Preis |
|---|---|
| 1+ | 20.13 EUR |
| 10+ | 15.05 EUR |
| 100+ | 13.01 EUR |
| 500+ | 12.3 EUR |
| 800+ | 10.47 EUR |
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Technische Details E4M0045075J2-TR Wolfspeed
Description: MOSFETS 1606 PF 172W 3.8V 62 NC, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V, Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V, Drain to Source Voltage (Vdss): 750 V, Vgs (Max): +19V, -8V, Drive Voltage (Max Rds On, Min Rds On): 15V, Grade: Automotive, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 3.8V @ 4.84mA, Power Dissipation (Max): 172W (Tc), Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote E4M0045075J2-TR nach Preis ab 12.37 EUR bis 21.16 EUR
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E4M0045075J2-TR | Wolfspeed, Inc. |
 Description: MOSFETS 1606 PF 172W 3.8V 62 NCMounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): +19V, -8V Drive Voltage (Max Rds On, Min Rds On): 15V Grade: Automotive Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 3.8V @ 4.84mA Power Dissipation (Max): 172W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V Current - Continuous Drain (Id) @ 25°C: 46A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 |
auf Bestellung 386 Stücke: Lieferzeit 10-14 Tag (e) |
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| E4M0045075J2-TR |
|
Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Description: MOSFETS 1606 PF 172W 3.8V 62 NC
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1606 pF @ 500 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): +19V, -8V
Drive Voltage (Max Rds On, Min Rds On): 15V
Grade: Automotive
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 3.8V @ 4.84mA
Power Dissipation (Max): 172W (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17.6A, 15V
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
auf Bestellung 386 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.16 EUR |
| 10+ | 14.79 EUR |
| 100+ | 12.37 EUR |