E4M0060075J2-TR Wolfspeed
| Anzahl | Privatkunde |
|---|---|
| 1+ | 16.26 EUR |
| 10+ | 8.98 EUR |
| 100+ | 8.43 EUR |
| 500+ | 7.84 EUR |
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10-14 Tag (e)
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Technische Details E4M0060075J2-TR Wolfspeed
Description: MOSFETS 1205 PF 131W 3.8V 50 NC, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V, Power Dissipation (Max): 131W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 3.67mA, Supplier Device Package: TO-263-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): +19V, -8V, Drain to Source Voltage (Vdss): 750 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V, Qualification: AEC-Q101.
Weitere Produktangebote E4M0060075J2-TR nach Preis ab 9.65 EUR bis 18.64 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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E4M0060075J2-TR | Wolfspeed, Inc. |
 Description: MOSFETS 1205 PF 131W 3.8V 50 NCPackaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 3.67mA Supplier Device Package: TO-263-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 15V Vgs (Max): +19V, -8V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V Qualification: AEC-Q101 |
auf Bestellung 658 Stücke: Lieferzeit 10-14 Tag (e) |
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| E4M0060075J2-TR |
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Hersteller: Wolfspeed, Inc.
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
Description: MOSFETS 1205 PF 131W 3.8V 50 NC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 13.4A, 15V
Power Dissipation (Max): 131W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 3.67mA
Supplier Device Package: TO-263-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): +19V, -8V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1205 pF @ 500 V
Qualification: AEC-Q101
auf Bestellung 658 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.64 EUR |
| 10+ | 12.79 EUR |
| 50+ | 10.29 EUR |
| 100+ | 9.65 EUR |