E6D20065G Wolfspeed
Hersteller: Wolfspeed
SiC Schottky Diodes SiC, Schottky Diode, 20A, 650V, TO-263-2, Automotive, Gen6
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.57 EUR |
| 10+ | 10.77 EUR |
| 100+ | 8.98 EUR |
| 250+ | 8.62 EUR |
| 500+ | 7.93 EUR |
| 1000+ | 7.12 EUR |
| 2500+ | 6.81 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
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Technische Details E6D20065G Wolfspeed
Description: DIODE SIL CARB 650V 68A TO2632, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 1277pF @ 0V, 1MHz, Current - Average Rectified (Io): 68A, Supplier Device Package: TO-263-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Current - Reverse Leakage @ Vr: 75 µA @ 650 V.
Weitere Produktangebote E6D20065G nach Preis ab 7.12 EUR bis 16.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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E6D20065G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 68A TO2632 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1277pF @ 0V, 1MHz Current - Average Rectified (Io): 68A Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Current - Reverse Leakage @ Vr: 75 µA @ 650 V |
auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
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| E6D20065G |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 68A TO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Description: DIODE SIL CARB 650V 68A TO2632
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Current - Average Rectified (Io): 68A
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.67 EUR |
| 50+ | 9.12 EUR |
| 100+ | 8.39 EUR |
| 500+ | 7.12 EUR |