E6D20065G Wolfspeed
Hersteller: Wolfspeed
SiC Schottky Diodes SiC, Schottky Diode, 20A, 650V, TO-263-2, Automotive, Gen6
| Anzahl | Preis |
|---|---|
| 1+ | 11.86 EUR |
| 10+ | 10.17 EUR |
| 100+ | 8.48 EUR |
| 250+ | 8.13 EUR |
| 500+ | 7.48 EUR |
| 1000+ | 6.72 EUR |
| 2500+ | 6.42 EUR |
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Technische Details E6D20065G Wolfspeed
Description: DIODE SIL CARB 650V 68A TO2632, Current - Reverse Leakage @ Vr: 75 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-263-2, Current - Average Rectified (Io): 68A, Capacitance @ Vr, F: 1277pF @ 0V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Reverse Recovery Time (trr): 0 ns, Speed: No Recovery Time > 500mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Bulk.
Weitere Produktangebote E6D20065G nach Preis ab 5.98 EUR bis 14.01 EUR
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E6D20065G | Wolfspeed, Inc. |
Description: DIODE SIL CARB 650V 68A TO2632 Current - Reverse Leakage @ Vr: 75 µA @ 650 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A Voltage - DC Reverse (Vr) (Max): 650 V Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: TO-263-2 Current - Average Rectified (Io): 68A Capacitance @ Vr, F: 1277pF @ 0V, 1MHz Technology: SiC (Silicon Carbide) Schottky Reverse Recovery Time (trr): 0 ns Speed: No Recovery Time > 500mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Bulk |
auf Bestellung 965 Stücke: Lieferzeit 10-14 Tag (e) |
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| E6D20065G |
|
Hersteller: Wolfspeed, Inc.
Description: DIODE SIL CARB 650V 68A TO2632
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
Description: DIODE SIL CARB 650V 68A TO2632
Current - Reverse Leakage @ Vr: 75 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263-2
Current - Average Rectified (Io): 68A
Capacitance @ Vr, F: 1277pF @ 0V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Reverse Recovery Time (trr): 0 ns
Speed: No Recovery Time > 500mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 965 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 14.01 EUR |
| 50+ | 7.66 EUR |
| 100+ | 7.05 EUR |
| 500+ | 5.98 EUR |