EC4H09C-TL-H onsemi
Hersteller: onsemiDescription: RF TRANS NPN 3.5V 26GHZ ECSP1008
Packaging: Bulk
Package / Case: 4-UFDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Gain: 15dB
Power - Max: 120mW
Current - Collector (Ic) (Max): 40mA
Voltage - Collector Emitter Breakdown (Max): 3.5V
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V
Frequency - Transition: 26GHz
Noise Figure (dB Typ @ f): 1.3dB @ 2GHz
Supplier Device Package: 4-ECSP1008
auf Bestellung 37000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 437+ | 1.17 EUR |
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Technische Details EC4H09C-TL-H onsemi
Description: RF TRANS NPN 3.5V 26GHZ ECSP1008, Packaging: Tape & Reel (TR), Package / Case: 4-UFDFN, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Gain: 15dB, Power - Max: 120mW, Current - Collector (Ic) (Max): 40mA, Voltage - Collector Emitter Breakdown (Max): 3.5V, DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V, Frequency - Transition: 26GHz, Noise Figure (dB Typ @ f): 1.3dB @ 2GHz, Supplier Device Package: 4-ECSP1008.
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EC4H09C-TL-H | Hersteller : onsemi |
Description: RF TRANS NPN 3.5V 26GHZ ECSP1008 Packaging: Tape & Reel (TR) Package / Case: 4-UFDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Gain: 15dB Power - Max: 120mW Current - Collector (Ic) (Max): 40mA Voltage - Collector Emitter Breakdown (Max): 3.5V DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 1V Frequency - Transition: 26GHz Noise Figure (dB Typ @ f): 1.3dB @ 2GHz Supplier Device Package: 4-ECSP1008 |
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