Produkte > ONSEMI > ECH8306-TL-E
ECH8306-TL-E

ECH8306-TL-E onsemi


Hersteller: onsemi
Description: MOSFET P-CH 100V 2A 8ECH
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Supplier Device Package: 8-ECH
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1150+0.4 EUR
Mindestbestellmenge: 1150 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details ECH8306-TL-E onsemi

Description: MOSFET P-CH 100V 2A 8ECH, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Supplier Device Package: 8-ECH, Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).