ECH8310-TL-H onsemi
Hersteller: onsemi
Description: MOSFET P-CH 30V 9A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 8+ | 2.2 EUR |
| 13+ | 1.38 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.65 EUR |
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Technische Details ECH8310-TL-H onsemi
Description: MOSFET P-CH 30V 9A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 8-ECH, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 10 V.
Weitere Produktangebote ECH8310-TL-H
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Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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ECH8310-TL-H | ON Semiconductor |
MOSFET SWITCHING DEVICE |
auf Bestellung 2659 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| ECH8310-TL-H |
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Hersteller: ON Semiconductor
MOSFET SWITCHING DEVICE
MOSFET SWITCHING DEVICE
auf Bestellung 2659 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH