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ECH8320-TL-H

ECH8320-TL-H Fairchild Semiconductor

ONSMS35677-1.pdf?t.download=true&u=5oefqw Hersteller: Fairchild Semiconductor
Description: MOSFET P-CH 20V 9.5A SOT28FL
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: SOT-28FL/ECH8
Part Status: Obsolete
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
624+0.74 EUR
Mindestbestellmenge: 624
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details ECH8320-TL-H Fairchild Semiconductor

Description: MOSFET P-CH 20V 9.5A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Supplier Device Package: 8-ECH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V.

Weitere Produktangebote ECH8320-TL-H nach Preis ab 0.74 EUR bis 0.74 EUR

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ECH8320-TL-H ECH8320-TL-H Hersteller : onsemi ONSMS35677-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
auf Bestellung 122629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
624+0.74 EUR
Mindestbestellmenge: 624
Im Einkaufswagen  Stück im Wert von  UAH
ECH8320-TL-H ECH8320-TL-H Hersteller : ONSEMI ONSMS35677-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - ECH8320-TL-H - ECH8320-TL-H, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 122629 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
ECH8320-TL-H ECH8320-TL-H Hersteller : onsemi ONSMS35677-1.pdf?t.download=true&u=5oefqw Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH