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ECH8411-TL-E

ECH8411-TL-E onsemi


Hersteller: onsemi
Description: MOSFET N-CH 20V 9A 8ECH
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 8-ECH
Power Dissipation (Max): 1.4W (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4A, 4V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1480+0.35 EUR
Mindestbestellmenge: 1480 Stücke
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Technische Details ECH8411-TL-E onsemi

Description: MOSFET N-CH 20V 9A 8ECH, Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: 8-ECH, Power Dissipation (Max): 1.4W (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 4A, 4V, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).