auf Bestellung 198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.01 EUR |
| 10+ | 2.71 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.48 EUR |
| 3000+ | 1.37 EUR |
| 6000+ | 1.36 EUR |
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Technische Details ECH8663R-TL-H onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH.
Weitere Produktangebote ECH8663R-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| ECH8663R-TL-H | Hersteller : ON Semiconductor |
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auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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ECH8663R-TL-H | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 8A 8ECH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
Produkt ist nicht verfügbar |
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ECH8663R-TL-H | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 8A 8ECH Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
Produkt ist nicht verfügbar |
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| ECH8663R-TL-H | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 8A; Idm: 60A; 1.4W; ECH8 Mounting: SMD Type of transistor: N-MOSFET x2 Kind of package: reel; tape Polarisation: unipolar Gate charge: 12.3nC On-state resistance: 20.5mΩ Drain current: 8A Power dissipation: 1.4W Gate-source voltage: ±12V Drain-source voltage: 30V Pulsed drain current: 60A Kind of channel: enhancement Case: ECH8 |
Produkt ist nicht verfügbar |