| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.52 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 0.95 EUR |
| 3000+ | 0.87 EUR |
| 6000+ | 0.76 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Produktrezensionen
Produktbewertung abgeben
Technische Details ECH8663R-TL-H onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 8A, Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V, FET Feature: Logic Level Gate, Supplier Device Package: 8-ECH.
Weitere Produktangebote ECH8663R-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
 |
ECH8663R-TL-H | onsemi |
 Description: MOSFET 2N-CH 30V 8A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
ECH8663R-TL-H | onsemi |
Description: MOSFET 2N-CH 30V 8A 8ECH Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V FET Feature: Logic Level Gate Supplier Device Package: 8-ECH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ECH8663R-TL-H |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Description: MOSFET 2N-CH 30V 8A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ECH8663R-TL-H |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 8A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Description: MOSFET 2N-CH 30V 8A 8ECH
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Rds On (Max) @ Id, Vgs: 20.5mOhm @ 4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.3nC @ 4.5V
FET Feature: Logic Level Gate
Supplier Device Package: 8-ECH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH