auf Bestellung 4647 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.37 EUR |
| 2500+ | 0.34 EUR |
| 5000+ | 0.33 EUR |
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Technische Details EFC2J013NUZTDG onsemi
Description: MOSFET N-CH 12V 17A WLCSP6 DUAL, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, No Lead, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.8W (Ta), Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V, Vgs(th) (Max) @ Id: 1.3V @ 1mA, Supplier Device Package: 6-WLCSP (2x1.49), Part Status: Active.
Weitere Produktangebote EFC2J013NUZTDG nach Preis ab 0.41 EUR bis 1.07 EUR
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EFC2J013NUZTDG | Hersteller : ONSEMI |
 Description: ONSEMI - EFC2J013NUZTDG - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 1645 Stücke: Lieferzeit 14-21 Tag (e) |
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| EFC2J013NUZTDG | Hersteller : onsemi |
Description: MOSFET N-CH 12V 17A WLCSP6 DUAL Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta) Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 6-WLCSP (2x1.49) Part Status: Active |
auf Bestellung 4252 Stücke: Lieferzeit 10-14 Tag (e) |
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| EFC2J013NUZTDG | Hersteller : ON Semiconductor |
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auf Bestellung 6216 Stücke: Lieferzeit 21-28 Tag (e) |
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| EFC2J013NUZTDG | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 12V 17A 6-Pin WLCSP T/R |
Produkt ist nicht verfügbar |
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| EFC2J013NUZTDG | Hersteller : onsemi |
Description: MOSFET N-CH 12V 17A WLCSP6 DUAL Packaging: Tape & Reel (TR) Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W (Ta) Gate Charge (Qg) (Max) @ Vgs: 37nC @ 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 6-WLCSP (2x1.49) Part Status: Active |
Produkt ist nicht verfügbar |