Technische Details EFC4612R-S-TR ON Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; Idm: 60A; 1.6W; WLCSP4, Mounting: SMD, Drain-source voltage: 24V, Drain current: 6A, On-state resistance: 72mΩ, Type of transistor: N-MOSFET x2, Case: WLCSP4, Power dissipation: 1.6W, Polarisation: unipolar, Kind of package: reel; tape, Features of semiconductor devices: ESD protected gate, Kind of channel: enhanced, Gate-source voltage: ±12V, Pulsed drain current: 60A, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote EFC4612R-S-TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| EFC4612R-S-TR | Hersteller : ON Semiconductor |
auf Bestellung 159970 Stücke: Lieferzeit 21-28 Tag (e) |
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| EFC4612R-S-TR | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; Idm: 60A; 1.6W; WLCSP4 Mounting: SMD Drain-source voltage: 24V Drain current: 6A On-state resistance: 72mΩ Type of transistor: N-MOSFET x2 Case: WLCSP4 Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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EFC4612R-S-TR | Hersteller : ON Semiconductor | Description: MOSFET N-CH 24V 6A EFCP |
Produkt ist nicht verfügbar |
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| EFC4612R-S-TR | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 24V; 6A; Idm: 60A; 1.6W; WLCSP4 Mounting: SMD Drain-source voltage: 24V Drain current: 6A On-state resistance: 72mΩ Type of transistor: N-MOSFET x2 Case: WLCSP4 Power dissipation: 1.6W Polarisation: unipolar Kind of package: reel; tape Features of semiconductor devices: ESD protected gate Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 60A |
Produkt ist nicht verfügbar |