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EFC4618R-P-TR

EFC4618R-P-TR onsemi


Hersteller: onsemi
Description: MOSFET 2N-CH EFCP1818
Supplier Device Package: EFCP1818-4CC-037
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V
Power - Max: 1.6W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 4-XFBGA, FCBGA
Packaging: Bulk
auf Bestellung 538171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1457+0.34 EUR
Mindestbestellmenge: 1457
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Technische Details EFC4618R-P-TR onsemi

Description: MOSFET 2N-CH EFCP1818, Packaging: Tape & Reel (TR), Package / Case: 4-XFBGA, FCBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.6W, Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Supplier Device Package: EFCP1818-4CC-037.

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EFC4618R-P-TR EFC4618R-P-TR onsemi Description: MOSFET 2N-CH EFCP1818
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP1818-4CC-037
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EFC4618R-P-TR
EFC4618R-P-TR
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP1818
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Gate Charge (Qg) (Max) @ Vgs: 25.4nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP1818-4CC-037
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH