EFC6601R-TR onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP2718
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, FCBGA
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
FET Feature: Logic Level Gate, 2.5V Drive
Supplier Device Package: EFCP2718-6CE-020
Part Status: Active
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Technische Details EFC6601R-TR onsemi
Description: MOSFET 2N-CH EFCP2718, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, FCBGA, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V, FET Feature: Logic Level Gate, 2.5V Drive, Supplier Device Package: EFCP2718-6CE-020, Part Status: Active.
Weitere Produktangebote EFC6601R-TR nach Preis ab 0.62 EUR bis 2.59 EUR
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EFC6601R-TR | onsemi |
MOSFETs NCH+NCH 2.5V DRIVE SERIES |
auf Bestellung 5081 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC6601R-TR | onsemi |
Description: MOSFET 2N-CH EFCP2718 Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-XFBGA, FCBGA Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EFCP2718-6CE-020 FET Feature: Logic Level Gate, 2.5V Drive |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| EFC6601R-TR | ON Semiconductor |
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auf Bestellung 2880 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| EFC6601R-TR |
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Hersteller: onsemi
MOSFETs NCH+NCH 2.5V DRIVE SERIES
MOSFETs NCH+NCH 2.5V DRIVE SERIES
auf Bestellung 5081 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.56 EUR |
| 10+ | 1.52 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.69 EUR |
| 2500+ | 0.65 EUR |
| 5000+ | 0.62 EUR |
| EFC6601R-TR |
|
Hersteller: onsemi
Description: MOSFET 2N-CH EFCP2718
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, FCBGA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EFCP2718-6CE-020
FET Feature: Logic Level Gate, 2.5V Drive
Description: MOSFET 2N-CH EFCP2718
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 4.5V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, FCBGA
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EFCP2718-6CE-020
FET Feature: Logic Level Gate, 2.5V Drive
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.59 EUR |
| 13+ | 1.63 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.76 EUR |
| 2000+ | 0.7 EUR |
| EFC6601R-TR |
|
Hersteller: ON Semiconductor
auf Bestellung 2880 Stücke:
Lieferzeit 21-28 Tag (e)