EGF1B-E3/67A Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Tape & Reel (TR)
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Technische Details EGF1B-E3/67A Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-214BA (GF1), Current - Average Rectified (Io): 1A, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-214BA, Packaging: Tape & Reel (TR).
Weitere Produktangebote EGF1B-E3/67A nach Preis ab 0.33 EUR bis 1.76 EUR
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EGF1B-E3/67A | Vishay Semiconductors |
Rectifiers 1.0 Amp 100V 50ns |
auf Bestellung 11203 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1B-E3/67A | Vishay General Semiconductor |
Rectifiers 1.0 Amp 100V 50ns |
auf Bestellung 11571 Stücke: Lieferzeit 10-14 Tag (e) |
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EGF1B-E3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 100V 1A DO214BA Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 15pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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| EGF1B-E3/67A |
|
Hersteller: Vishay Semiconductors
Rectifiers 1.0 Amp 100V 50ns
Rectifiers 1.0 Amp 100V 50ns
auf Bestellung 11203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.56 EUR |
| EGF1B-E3/67A |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1.0 Amp 100V 50ns
Rectifiers 1.0 Amp 100V 50ns
auf Bestellung 11571 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.33 EUR |
| EGF1B-E3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO214BA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |