Technische Details EGF1THE3/67A Vishay Semiconductors
Description: DIODE GEN PURP 1.3KV 1A DO214BA, Packaging: Tape & Reel (TR), Package / Case: DO-214BA, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-214BA (GF1), Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Voltage - DC Reverse (Vr) (Max): 1300 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 1300 V, Qualification: AEC-Q101.
Weitere Produktangebote EGF1THE3/67A
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| EGF1THE3/67A | Vishay |
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EGF1THE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
|
EGF1THE3/67A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.3KV 1A DO214BA Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 5 µA @ 1300 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 1300 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214BA (GF1) Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 75 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214BA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| EGF1THE3/67A |
|
Hersteller: Vishay
Діоди та діодні збірки
Діоди та діодні збірки
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGF1THE3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EGF1THE3/67A |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 1.3KV 1A DO214BA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1300 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214BA (GF1)
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214BA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH