EGL34A-E3/83 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 50V 500MA DO213AA, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA, Voltage - DC Reverse (Vr) (Max): 50 V, Part Status: Active, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-213AA (GL34), Current - Average Rectified (Io): 500mA, Capacitance @ Vr, F: 7pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: DO-213AA (Glass), Packaging: Tape & Reel (TR).