EGP10D-TP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
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Technische Details EGP10D-TP Micro Commercial Co
Description: DIODE GEN PURP 200V 1A DO41, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-204AL, DO-41, Axial, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Voltage - DC Reverse (Vr) (Max): 200 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-41, Current - Average Rectified (Io): 1A, Technology: Standard.
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EGP10D-TP | Hersteller : Micro Commercial Co |
Description: DIODE GEN PURP 200V 1A DO41 Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 5 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-41 |
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