EGP30A-TP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 50V 3A DO201AE
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 50 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AE
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-201AE, Axial
Packaging: Tape & Reel (TR)
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Technische Details EGP30A-TP Micro Commercial Co
Description: DIODE GEN PURP 50V 3A DO201AE, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Voltage - DC Reverse (Vr) (Max): 50 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: DO-201AE, Current - Average Rectified (Io): 3A, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AE, Axial, Packaging: Tape & Reel (TR).
Weitere Produktangebote EGP30A-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| EGP30A-TP | Hersteller : Micro Commercial Co |
Description: DIODE GEN PURP 50V 3A DO201AE Current - Reverse Leakage @ Vr: 5 µA @ 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Voltage - DC Reverse (Vr) (Max): 50 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-201AE Current - Average Rectified (Io): 3A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-201AE, Axial Packaging: Cut Tape (CT) |
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