EGP30D-E3/73 Vishay Semiconductors
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Technische Details EGP30D-E3/73 Vishay Semiconductors
Description: DIODE STANDARD 200V 3A GP20, Packaging: Tape & Box (TB), Package / Case: DO-201AA, DO-27, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Current - Average Rectified (Io): 3A, Supplier Device Package: GP20, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 200 V.
Weitere Produktangebote EGP30D-E3/73
| Foto | Bezeichnung | Hersteller | Beschreibung |
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EGP30D-E3/73 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE STANDARD 200V 3A GP20Packaging: Tape & Box (TB) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: GP20 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
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