EGP31B-E3/C Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 100V 3A DO201AD, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: DO-201AD, Axial, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 1 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Voltage - DC Reverse (Vr) (Max): 100 V, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-201AD, Current - Average Rectified (Io): 3A, Capacitance @ Vr, F: 117pF @ 4V, 1MHz, Technology: Standard.