EM 2BV1 Sanken Electric USA Inc.
Hersteller: Sanken Electric USA Inc.Description: DIODE GEN PURP 800V 1.2A AXIAL
Packaging: Cut Tape (CT)
Package / Case: Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1.2A
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1116 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 13+ | 1.41 EUR |
| 15+ | 1.23 EUR |
| 100+ | 0.85 EUR |
| 500+ | 0.71 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EM 2BV1 Sanken Electric USA Inc.
Description: DIODE GEN PURP 800V 1.2A AXIAL, Packaging: Tape & Box (TB), Package / Case: Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1.2A, Operating Temperature - Junction: -40°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A, Current - Reverse Leakage @ Vr: 10 µA @ 800 V.
Weitere Produktangebote EM 2BV1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
|
|
EM 2BV1 | Hersteller : Sanken Electric USA Inc. |
Description: DIODE GEN PURP 800V 1.2A AXIAL Packaging: Tape & Box (TB) Package / Case: Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1.2A Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1.2 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
Produkt ist nicht verfügbar |