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EM6K31GT2R

EM6K31GT2R ROHM Semiconductor

em6k31-e-1144223.pdf
Hersteller: ROHM Semiconductor
MOSFETs 2.5V Drive Nch+Nch MOSFET
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Lieferzeit 10-14 Tag (e)
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5+0.57 EUR
10+0.45 EUR
100+0.25 EUR
1000+0.15 EUR
8000+0.13 EUR
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Technische Details EM6K31GT2R ROHM Semiconductor

Description: MOSFET 2N-CH 60V 0.25A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 120mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: EMT6, Part Status: Active.

Weitere Produktangebote EM6K31GT2R nach Preis ab 0.19 EUR bis 0.79 EUR

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Preis
EM6K31GT2R EM6K31GT2R Hersteller : Rohm Semiconductor em6k31-e.pdf Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 6310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
37+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
EM6K31GT2R EM6K31GT2R Hersteller : Rohm Semiconductor em6k31-e.pdf Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
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