EM6K31GT2R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 120mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.15 EUR |
| 16000+ | 0.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EM6K31GT2R Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 120mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, FET Feature: Logic Level Gate, 2.5V Drive, Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: EMT6, Part Status: Active.
Weitere Produktangebote EM6K31GT2R nach Preis ab 0.13 EUR bis 0.84 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
EM6K31GT2R | Hersteller : ROHM Semiconductor |
MOSFETs 2.5V Drive Nch+Nch MOSFET |
auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
EM6K31GT2R | Hersteller : Rohm Semiconductor |
Description: MOSFET 2N-CH 60V 0.25A EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 120mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 30779 Stücke: Lieferzeit 10-14 Tag (e) |
|