| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.5 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |
| 5000+ | 0.31 EUR |
| 8000+ | 0.29 EUR |
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Technische Details EM6K31T2R ROHM Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 250mA, Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.3V @ 1mA, Supplier Device Package: EMT6, Part Status: Active.
Weitere Produktangebote EM6K31T2R nach Preis ab 0.46 EUR bis 1.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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EM6K31T2R | Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 0.25A EMT6Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 250mA Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.3V @ 1mA Supplier Device Package: EMT6 Part Status: Active |
auf Bestellung 1131 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EM6K31T2R |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.25A EMT6
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Supplier Device Package: EMT6
Part Status: Active
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 23+ | 0.94 EUR |
| 50+ | 0.69 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |