| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.5 EUR |
| 10+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |
| 5000+ | 0.31 EUR |
| 8000+ | 0.29 EUR |
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Technische Details EM6K31T2R ROHM Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6, Part Status: Active, Supplier Device Package: EMT6, Vgs(th) (Max) @ Id: 2.3V @ 1mA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V, Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 250mA, Drain to Source Voltage (Vdss): 60V, Power - Max: 150mW, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote EM6K31T2R nach Preis ab 0.46 EUR bis 1.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EM6K31T2R | Rohm Semiconductor |
 Description: MOSFET 2N-CH 60V 0.25A EMT6Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V Current - Continuous Drain (Id) @ 25°C: 250mA Drain to Source Voltage (Vdss): 60V Power - Max: 150mW Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 Vgs(th) (Max) @ Id: 2.3V @ 1mA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V |
auf Bestellung 1131 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EM6K31T2R |
|
Hersteller: Rohm Semiconductor
Description: MOSFET 2N-CH 60V 0.25A EMT6
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
Description: MOSFET 2N-CH 60V 0.25A EMT6
Input Capacitance (Ciss) (Max) @ Vds: 15pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 250mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 150mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Vgs(th) (Max) @ Id: 2.3V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 2.4Ohm @ 250mA, 10V
auf Bestellung 1131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 23+ | 0.94 EUR |
| 50+ | 0.69 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.46 EUR |