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EMC5DXV5T1G

EMC5DXV5T1G onsemi

emc2dxv5t1-d.pdf
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Resistor - Base (R1): 47kOhms, 4.7kOhms
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.16 EUR
8000+0.15 EUR
12000+0.14 EUR
20000+0.13 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EMC5DXV5T1G onsemi

Description: TRANS PREBIAS NPN/PNP 50V SOT553, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Supplier Device Package: SOT-553, Resistor - Emitter Base (R2): 47kOhms, 10kOhms, Resistor - Base (R1): 47kOhms, 4.7kOhms, Package / Case: SOT-553, Packaging: Tape & Reel (TR).

Weitere Produktangebote EMC5DXV5T1G nach Preis ab 0.17 EUR bis 0.6 EUR

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EMC5DXV5T1G EMC5DXV5T1G onsemi emc2dxv5t1-d.pdf Description: TRANS PREBIAS NPN/PNP 50V SOT553
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Resistor - Base (R1): 47kOhms, 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
auf Bestellung 27445 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
44+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
EMC5DXV5T1G EMC5DXV5T1G ON Semiconductor EMC2DXV5T1_D-2311181.pdf Bipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP
auf Bestellung 8764 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EMC5DXV5T1G emc2dxv5t1-d.pdf
EMC5DXV5T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 47kOhms, 10kOhms
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Cut Tape (CT)
Resistor - Base (R1): 47kOhms, 4.7kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 20 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
auf Bestellung 27445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
44+0.4 EUR
100+0.27 EUR
500+0.21 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
EMC5DXV5T1G EMC2DXV5T1_D-2311181.pdf
EMC5DXV5T1G
Hersteller: ON Semiconductor
Bipolar Transistors - Pre-Biased 50V Dual Common Base Collector NPN & PNP
auf Bestellung 8764 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH