Technische Details EMD6T2R Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6, Part Status: Active, Supplier Device Package: EMT6, Resistor - Base (R1): 4.7kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote EMD6T2R nach Preis ab 0.17 EUR bis 1.01 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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EMD6T2R | Rohm Semiconductor |
 Description: TRANS NPN/PNP PREBIAS 0.15W EMT6Part Status: Active Supplier Device Package: EMT6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD6T2R | Rohm Semiconductor |
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6 Resistor - Base (R1): 4.7kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: EMT6 |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD6T2R | ROHM Semiconductor |
Digital Transistors PNP/NPN 50V 100MA |
auf Bestellung 244 Stücke: Lieferzeit 10-14 Tag (e) |
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EMD6T2R | Rohm Semiconductor |
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 43 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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EMD6T2R | Rohm Semiconductor |
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| EMD6-T2R |
auf Bestellung 72500 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| EMD6T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Part Status: Active
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Part Status: Active
Supplier Device Package: EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.19 EUR |
| 16000+ | 0.17 EUR |
| EMD6T2R |
|
Hersteller: Rohm Semiconductor
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
Description: TRANS NPN/PNP PREBIAS 0.15W EMT6
Resistor - Base (R1): 4.7kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT6
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 37+ | 0.57 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.2 EUR |
| EMD6T2R |
|
Hersteller: ROHM Semiconductor
Digital Transistors PNP/NPN 50V 100MA
Digital Transistors PNP/NPN 50V 100MA
auf Bestellung 244 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.01 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.24 EUR |
| 5000+ | 0.2 EUR |
| 8000+ | 0.18 EUR |
| EMD6T2R |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
| EMD6T2R |
|
Hersteller: Rohm Semiconductor
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| EMD6-T2R |
auf Bestellung 72500 Stücke:
Lieferzeit 21-28 Tag (e)