EMD9T2R Rohm Semiconductor
| Anzahl | Preis |
|---|---|
| 8000+ | 0.15 EUR |
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Technische Details EMD9T2R Rohm Semiconductor
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT6.
Weitere Produktangebote EMD9T2R nach Preis ab 0.12 EUR bis 1.03 EUR
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EMD9T2R | Hersteller : Rohm Semiconductor |
 Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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EMD9T2R | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R |
auf Bestellung 4950 Stücke: Lieferzeit 14-21 Tag (e) |
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EMD9T2R | Hersteller : Rohm Semiconductor |
Trans Digital BJT NPN/PNP 50V 0.1A 150mW 6-Pin EMT T/R |
auf Bestellung 4307 Stücke: Lieferzeit 14-21 Tag (e) |
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EMD9T2R | Hersteller : ROHM Semiconductor |
Digital Transistors PNP/NPN 50V 70MA |
auf Bestellung 7990 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMD9-T2R |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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| EMD9T2R | Hersteller : ROHM |
SOT363 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| EMD9 T2R | Hersteller : ROHM | SOT663 |
auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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EMD9T2R | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
Produkt ist nicht verfügbar |
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EMD9T2R | Hersteller : Rohm Semiconductor |
Description: TRANS PREBIAS 1NPN 1PNP 50V EMT6 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT6 |
Produkt ist nicht verfügbar |
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| EMD9T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SOT563 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ Current gain: 68 |
Produkt ist nicht verfügbar |