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EMG2T2R

EMG2T2R Rohm Semiconductor

datasheet?p=EMG2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
Part Status: Active
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Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
32+0.56 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.22 EUR
2000+0.20 EUR
Mindestbestellmenge: 26
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Technische Details EMG2T2R Rohm Semiconductor

Description: TRANS 2NPN PREBIAS 0.15W EMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT5, Part Status: Active.

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EMG2T2R Hersteller : ROHM SEMICONDUCTOR datasheet?p=EMG2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key EMG2T2R NPN SMD transistors
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EMG2T2R EMG2T2R Hersteller : Rohm Semiconductor datasheet?p=EMG2&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EMG2T2R EMG2T2R Hersteller : ROHM Semiconductor emg2t2r-e-1018058.pdf Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
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