EMG2T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
| Anzahl | Privatkunde |
|---|---|
| 26+ | 0.82 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.24 EUR |
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Technische Details EMG2T2R Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5, Part Status: Active, Supplier Device Package: EMT5, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: 6-SMD (5 Leads), Flat Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote EMG2T2R
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
EMG2T2R | Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT5Part Status: Active Supplier Device Package: EMT5 Resistor - Emitter Base (R2): 47kOhms Resistor - Base (R1): 47kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
EMG2T2R | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| EMG2T2R |
![]() |
Hersteller: Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Part Status: Active
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Description: TRANS 2NPN PREBIAS 0.15W EMT5
Part Status: Active
Supplier Device Package: EMT5
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| EMG2T2R |
![]() |
Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH

