EMG2T2R Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: TRANS 2NPN PREBIAS 0.15W EMT5
Packaging: Cut Tape (CT)
Package / Case: 6-SMD (5 Leads), Flat Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: EMT5
Part Status: Active
auf Bestellung 2855 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 26+ | 1.01 EUR |
| 32+ | 0.83 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.32 EUR |
| 2000+ | 0.29 EUR |
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Technische Details EMG2T2R Rohm Semiconductor
Description: TRANS 2NPN PREBIAS 0.15W EMT5, Packaging: Tape & Reel (TR), Package / Case: 6-SMD (5 Leads), Flat Lead, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 47kOhms, Resistor - Emitter Base (R2): 47kOhms, Supplier Device Package: EMT5, Part Status: Active.
Weitere Produktangebote EMG2T2R
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| EMG2T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ Mounting: SMD Case: SOT553 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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EMG2T2R | Hersteller : Rohm Semiconductor |
Description: TRANS 2NPN PREBIAS 0.15W EMT5 Packaging: Tape & Reel (TR) Package / Case: 6-SMD (5 Leads), Flat Lead Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 150mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: EMT5 Part Status: Active |
Produkt ist nicht verfügbar |
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EMG2T2R | Hersteller : ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA |
Produkt ist nicht verfügbar |
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| EMG2T2R | Hersteller : ROHM SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SOT553; R1: 47kΩ Mounting: SMD Case: SOT553 Kind of package: reel; tape Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN x2 Current gain: 68 Base-emitter resistor: 47kΩ Frequency: 250MHz Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 47kΩ Power dissipation: 0.15W |
Produkt ist nicht verfügbar |