| Anzahl | Privatkunde |
|---|---|
| 5+ | 0.76 EUR |
| 10+ | 0.58 EUR |
| 100+ | 0.32 EUR |
| 1000+ | 0.2 EUR |
| 8000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EMH4T2R ROHM Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 150mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V, Frequency - Transition: 250MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: EMT6.
Weitere Produktangebote EMH4T2R nach Preis ab 0.25 EUR bis 1.02 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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EMH4T2R | Rohm Semiconductor |
Description: TRANS PREBIAS 2NPN 50V EMT6Supplier Device Package: EMT6 Resistor - Base (R1): 10kOhms Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 150mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 15045 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMH4-T2R | ROHM |
auf Bestellung 36000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| EMH4T2R | ROHM |
03+ TO23 |
auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| EMH4T2R |
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Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS 2NPN 50V EMT6
Supplier Device Package: EMT6
Resistor - Base (R1): 10kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 15045 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 1.02 EUR |
| 34+ | 0.63 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.27 EUR |
| 2000+ | 0.25 EUR |
| EMH4-T2R |
Hersteller: ROHM
auf Bestellung 36000 Stücke:
Lieferzeit 21-28 Tag (e)
| EMH4T2R |
![]() |
Hersteller: ROHM
03+ TO23
03+ TO23
auf Bestellung 16000 Stücke:
Lieferzeit 21-28 Tag (e)


