EMH6T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 47kOhms
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 150mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Supplier Device Package: EMT6
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Technische Details EMH6T2R Rohm Semiconductor
Description: TRANS PREBIAS 2NPN 50V EMT6, Resistor - Emitter Base (R2): 47kOhms, Resistor - Base (R1): 47kOhms, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 150mW, Transistor Type: 2 NPN - Pre-Biased (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Cut Tape (CT), Supplier Device Package: EMT6.
Weitere Produktangebote EMH6T2R
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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EMH6T2R | ROHM Semiconductor |
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| EMH6T2R |
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Hersteller: ROHM Semiconductor
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Bipolar Transistors - Pre-Biased DUAL NPN 50V 30MA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH