EML22T2R Rohm Semiconductor
Hersteller: Rohm Semiconductor
Description: DEVELOPED SMALL PACKAGE COMPLEX
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Tape & Reel (TR)
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Technische Details EML22T2R Rohm Semiconductor
Description: DEVELOPED SMALL PACKAGE COMPLEX, Power - Max: 120 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 150 mA, Supplier Device Package: EMT6, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: NPN + Zener, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR).
Weitere Produktangebote EML22T2R nach Preis ab 0.17 EUR bis 0.93 EUR
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EML22T2R | Rohm Semiconductor |
Description: DEVELOPED SMALL PACKAGE COMPLEX Power - Max: 120 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: EMT6 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN + Zener Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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EML22T2R | ROHM Semiconductor |
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6 |
auf Bestellung 15999 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EML22T2R |
|
Hersteller: Rohm Semiconductor
Description: DEVELOPED SMALL PACKAGE COMPLEX
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: DEVELOPED SMALL PACKAGE COMPLEX
Power - Max: 120 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: EMT6
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN + Zener
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 29+ | 0.74 EUR |
| 38+ | 0.57 EUR |
| 100+ | 0.35 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.21 EUR |
| 2000+ | 0.2 EUR |
| EML22T2R |
|
Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
auf Bestellung 15999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 0.93 EUR |
| 10+ | 0.62 EUR |
| 100+ | 0.31 EUR |
| 1000+ | 0.24 EUR |
| 2500+ | 0.23 EUR |
| 8000+ | 0.17 EUR |