EMX1DXV6T1 onsemi
Hersteller: onsemi
Description: TRANS 2NPN 50V 100MA SOT-563
Part Status: Obsolete
Supplier Device Package: SOT-563
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 6662+ | 0.084 EUR |
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Technische Details EMX1DXV6T1 onsemi
Description: TRANS 2NPN 50V 100MA SOT-563, Part Status: Obsolete, Supplier Device Package: SOT-563, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 500nA (ICBO), Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA.
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EMX1DXV6T1 | Hersteller : onsemi |
Description: TRANS 2NPN 50V 100MA SOT-563 Part Status: Obsolete Supplier Device Package: SOT-563 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA |
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