EMX1DXV6T1 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - EMX1DXV6T1 - EMX1DXV6T1, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details EMX1DXV6T1 ONSEMI
Description: TRANS 2NPN 50V 100MA SOT-563, Part Status: Obsolete, Supplier Device Package: SOT-563, Frequency - Transition: 180MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V, Current - Collector Cutoff (Max): 500nA (ICBO), Voltage - Collector Emitter Breakdown (Max): 50V, Current - Collector (Ic) (Max): 100mA, Power - Max: 500mW, Operating Temperature: -55°C ~ 150°C (TJ), Transistor Type: 2 NPN (Dual), Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Tape & Reel (TR), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA.
Weitere Produktangebote EMX1DXV6T1 nach Preis ab 0.084 EUR bis 0.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
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EMX1DXV6T1 | onsemi |
Description: TRANS 2NPN 50V 100MA SOT-563 Part Status: Obsolete Supplier Device Package: SOT-563 Frequency - Transition: 180MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 500nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: 2 NPN (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Bulk |
auf Bestellung 23500 Stücke: Lieferzeit 10-14 Tag (e) |
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| EMX1DXV6T1 | ON Semiconductor |
Trans GP BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R |
auf Bestellung 19500 Stücke: Lieferzeit 14-21 Tag (e) |
|
| EMX1DXV6T1 |
|
Hersteller: onsemi
Description: TRANS 2NPN 50V 100MA SOT-563
Part Status: Obsolete
Supplier Device Package: SOT-563
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
Description: TRANS 2NPN 50V 100MA SOT-563
Part Status: Obsolete
Supplier Device Package: SOT-563
Frequency - Transition: 180MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: 2 NPN (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
auf Bestellung 23500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4537+ | 0.13 EUR |
| EMX1DXV6T1 |
|
Hersteller: ON Semiconductor
Trans GP BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R
Trans GP BJT NPN 50V 0.1A 500mW 6-Pin SOT-563 T/R
auf Bestellung 19500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6834+ | 0.096 EUR |
| 10000+ | 0.084 EUR |