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EMZ8T2R

EMZ8T2R ROHM Semiconductor

datasheet?p=EMZ8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Hersteller: ROHM Semiconductor
Bipolar Transistors - BJT DUAL PNP/NPN
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56+0.94 EUR
64+ 0.82 EUR
100+ 0.61 EUR
500+ 0.48 EUR
1000+ 0.37 EUR
2500+ 0.34 EUR
8000+ 0.28 EUR
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Technische Details EMZ8T2R ROHM Semiconductor

Description: TRANS NPN/PNP 50V/12V 6EMT, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP, Operating Temperature: 150°C (TJ), Power - Max: 150mW, Current - Collector (Ic) (Max): 150mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 12V, Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V, Frequency - Transition: 180MHz, 260MHz, Supplier Device Package: EMT6.

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EMZ8T2R EMZ8T2R Hersteller : Rohm Semiconductor datasheet?p=EMZ8&dist=Digi-key&media=referral&source=digi-key.com&campaign=Digi-key Description: TRANS NPN/PNP 50V/12V 6EMT
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: 150°C (TJ)
Power - Max: 150mW
Current - Collector (Ic) (Max): 150mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V / 270 @ 10mA, 2V
Frequency - Transition: 180MHz, 260MHz
Supplier Device Package: EMT6
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