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EPC2014C

EPC2014C

EPC2014C_datasheet.pdf
Hersteller: EPC
Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.21 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details EPC2014C EPC

Description: GANFET N-CH 40V 10A DIE OUTLINE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 2mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V.

Weitere Produktangebote EPC2014C nach Preis ab 1.13 EUR bis 4.25 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
EPC2014C EPC2014C EPC EPC2014C_datasheet.pdf Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 4418 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.21 EUR
10+2.69 EUR
100+1.82 EUR
500+1.45 EUR
1000+1.33 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2014C EPC2014C EPC EPC2014C_datasheet.pdf GaN FETs EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
auf Bestellung 15326 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.25 EUR
10+2.73 EUR
100+1.86 EUR
500+1.48 EUR
1000+1.36 EUR
2500+1.23 EUR
5000+1.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2014C EPC2014C_datasheet.pdf
EPC2014C
Hersteller: EPC
Description: GANFET N-CH 40V 10A DIE OUTLINE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 20 V
auf Bestellung 4418 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.21 EUR
10+2.69 EUR
100+1.82 EUR
500+1.45 EUR
1000+1.33 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2014C EPC2014C_datasheet.pdf
EPC2014C
Hersteller: EPC
GaN FETs EPC eGaN FET,40 V, 16 milliohm at 5 V, LGA 1.7 x 1.1
auf Bestellung 15326 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.25 EUR
10+2.73 EUR
100+1.86 EUR
500+1.48 EUR
1000+1.36 EUR
2500+1.23 EUR
5000+1.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH