EPC2033
Hersteller: EPC
Description: GANFET N-CH 150V 48A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
| Anzahl | Privatkunde |
|---|---|
| 500+ | 9.82 EUR |
| 1500+ | 9.79 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2033 EPC
Description: GANFET N-CH 150V 48A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 9mA, Supplier Device Package: Die, Part Status: Active, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75.
Weitere Produktangebote EPC2033 nach Preis ab 8.65 EUR bis 22.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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EPC2033 | EPC |
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auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2033 | EPC |
Description: GANFET N-CH 150V 48A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V Vgs(th) (Max) @ Id: 2.5V @ 9mA Supplier Device Package: Die Part Status: Active Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75 |
auf Bestellung 3760 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2033 |
|
Hersteller: EPC
auf Bestellung 500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 19.28 EUR |
| 10+ | 11.09 EUR |
| 100+ | 10.72 EUR |
| 500+ | 8.76 EUR |
| 1000+ | 8.65 EUR |
| EPC2033 |
|
Hersteller: EPC
Description: GANFET N-CH 150V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
Description: GANFET N-CH 150V 48A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Supplier Device Package: Die
Part Status: Active
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 75 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 75
auf Bestellung 3760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.16 EUR |
| 10+ | 15.33 EUR |
| 50+ | 12.4 EUR |
| 100+ | 11.98 EUR |