EPC2035
Hersteller: EPC
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.06 EUR |
| 5000+ | 0.99 EUR |
| 7500+ | 0.95 EUR |
| 12500+ | 0.92 EUR |
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Technische Details EPC2035 EPC
Description: GANFET N-CH 60V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 800µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V.
Weitere Produktangebote EPC2035 nach Preis ab 0.96 EUR bis 3.8 EUR
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EPC2035 | EPC |
Description: GANFET N-CH 60V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 800µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V |
auf Bestellung 19920 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2035 | EPC |
GaN FETs EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9 |
auf Bestellung 7164 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2035 |
|
Hersteller: EPC
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
Description: GANFET N-CH 60V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 800µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 115 pF @ 30 V
auf Bestellung 19920 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.77 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.29 EUR |
| 1000+ | 1.18 EUR |
| EPC2035 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9
GaN FETs EPC eGaN FET,60 V, 45 milliohm at 5 V, BGA 0.9 x 0.9
auf Bestellung 7164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| 2500+ | 1.07 EUR |
| 5000+ | 0.96 EUR |