EPC2036
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.06 EUR |
| 5000+ | 0.99 EUR |
| 7500+ | 0.95 EUR |
| 12500+ | 0.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2036 EPC
Description: GANFET N-CH 100V 1.7A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 600µA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Weitere Produktangebote EPC2036 nach Preis ab 0.96 EUR bis 3.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
EPC2036 | EPC |
Description: GANFET N-CH 100V 1.7A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V Vgs(th) (Max) @ Id: 2.5V @ 600µA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 27357 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
EPC2036 | EPC |
GaN FETs EPC eGaN FET,100 V, 73 milliohm at 5 V, BGA 0.9 x 0.9 |
auf Bestellung 11648 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| EPC2036 |
Транзистор GaNFET, Udss, В = 100, Rds, мОм = 65, Id, А = 1,7, C, пкФ = 90, Заряд, нКл = 0,91,... Транзистори Корпус: smd Очікується: 700 Од. вим: шт Anzahl je Verpackung: 2500 Stücke |
verfügbar 3 Stücke: |
Im Einkaufswagen Stück im Wert von UAH |
| EPC2036 |
|
Hersteller: EPC
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: GANFET N-CH 100V 1.7A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 1A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 600µA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 0.91 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 90 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 27357 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 2.39 EUR |
| 100+ | 1.61 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.17 EUR |
| EPC2036 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 73 milliohm at 5 V, BGA 0.9 x 0.9
GaN FETs EPC eGaN FET,100 V, 73 milliohm at 5 V, BGA 0.9 x 0.9
auf Bestellung 11648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.8 EUR |
| 10+ | 2.43 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| 2500+ | 1.07 EUR |
| 5000+ | 0.96 EUR |
| EPC2036 |
|
Транзистор GaNFET, Udss, В = 100, Rds, мОм = 65, Id, А = 1,7, C, пкФ = 90, Заряд, нКл = 0,91,... Транзистори Корпус: smd Очікується: 700 Од. вим: шт
Anzahl je Verpackung: 2500 Stücke
Anzahl je Verpackung: 2500 Stücke
verfügbar 3 Stücke: