EPC2050
Hersteller: EPC
Description: TRANS GAN BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
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Technische Details EPC2050 EPC
Description: TRANS GAN BUMPED DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 350 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V.
Weitere Produktangebote EPC2050 nach Preis ab 5.09 EUR bis 12.98 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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EPC2050 | EPC |
GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95 |
auf Bestellung 2031 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2050 | EPC |
Description: TRANS GAN BUMPED DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 350 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V |
auf Bestellung 9500 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2050 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
GaN FETs EPC eGaN FET, 350 V, 80 milliohm at 5 V, BGA 1.95 x 1.95
auf Bestellung 2031 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.96 EUR |
| 10+ | 8.76 EUR |
| 100+ | 6.37 EUR |
| 500+ | 6.01 EUR |
| 1000+ | 5.26 EUR |
| 2500+ | 5.09 EUR |
| EPC2050 |
|
Hersteller: EPC
Description: TRANS GAN BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
Description: TRANS GAN BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 350 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 628 pF @ 280 V
auf Bestellung 9500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.98 EUR |
| 10+ | 8.75 EUR |
| 100+ | 6.34 EUR |
| 500+ | 6.01 EUR |