EPC2053
Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
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Technische Details EPC2053 EPC
Description: GANFET N-CH 100V 48A DIE, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): +6V, -4V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Not For New Designs, Supplier Device Package: Die, Vgs(th) (Max) @ Id: 2.5V @ 9mA, Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V, Current - Continuous Drain (Id) @ 25°C: 48A (Ta), FET Type: N-Channel, Technology: GaNFET (Gallium Nitride), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: Die, Packaging: Tape & Reel (TR).
Weitere Produktangebote EPC2053 nach Preis ab 6.74 EUR bis 13.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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EPC2053 | EPC |
Description: GANFET N-CH 100V 48A DIE Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): +6V, -4V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Not For New Designs Supplier Device Package: Die Vgs(th) (Max) @ Id: 2.5V @ 9mA Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V Current - Continuous Drain (Id) @ 25°C: 48A (Ta) FET Type: N-Channel Technology: GaNFET (Gallium Nitride) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Packaging: Cut Tape (CT) Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 |
auf Bestellung 14755 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2053 |
|
Hersteller: EPC
Description: GANFET N-CH 100V 48A DIE
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Description: GANFET N-CH 100V 48A DIE
Input Capacitance (Ciss) (Max) @ Vds: 1895 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 14.8 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): +6V, -4V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Not For New Designs
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
auf Bestellung 14755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.2 EUR |
| 10+ | 8.92 EUR |
| 100+ | 6.74 EUR |