EPC2055
Hersteller: EPC
Description: GANFET N-CH 40V 29A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
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Technische Details EPC2055 EPC
Description: GANFET N-CH 40V 29A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 7mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20.
Weitere Produktangebote EPC2055 nach Preis ab 1.92 EUR bis 6.28 EUR
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EPC2055 | EPC |
Description: GANFET N-CH 40V 29A DIE Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 7mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20 |
auf Bestellung 23839 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2055 | EPC |
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5 |
auf Bestellung 6872 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2055 |
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Hersteller: EPC
Description: GANFET N-CH 40V 29A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
Description: GANFET N-CH 40V 29A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1254 pF @ 20 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 20
auf Bestellung 23839 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.26 EUR |
| 10+ | 4.07 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.3 EUR |
| 1000+ | 2.25 EUR |
| EPC2055 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
GaN FETs EPC eGaN FET, 40 V, 3.5 mohm at 5 V, LGA 2.5 x 1.5
auf Bestellung 6872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.28 EUR |
| 10+ | 4.08 EUR |
| 100+ | 2.84 EUR |
| 500+ | 2.31 EUR |
| 1000+ | 2.26 EUR |
| 2500+ | 1.95 EUR |
| 5000+ | 1.92 EUR |