EPC2059
Hersteller: EPCDescription: TRANS GAN 170V DIE .009OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 170 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85
auf Bestellung 862 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.85 EUR |
| 10+ | 4.51 EUR |
| 100+ | 3.19 EUR |
| 500+ | 2.94 EUR |
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Technische Details EPC2059 EPC
Description: TRANS GAN 170V DIE .009OHM, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Ta), Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 3mA, Supplier Device Package: Die, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 170 V, Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85.
Weitere Produktangebote EPC2059 nach Preis ab 20.46 EUR bis 20.46 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||
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| EPC2059 | Hersteller : EPC |
Transistor GANFET; 170V; 6V; 9mOhm; 24A; -40°C ~ 150°C; EPC2059 TEPC2059 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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EPC2059 | Hersteller : EPC |
Description: TRANS GAN 170V DIE .009OHM Packaging: Tape & Reel (TR) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta) Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 5V Vgs(th) (Max) @ Id: 2.5V @ 3mA Supplier Device Package: Die Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 170 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 836 pF @ 85 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 85 |
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