EPC2070
Hersteller: EPC
Description: TRANS GAN DIE 100V .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.92 EUR |
| 5000+ | 0.86 EUR |
| 7500+ | 0.82 EUR |
| 12500+ | 0.79 EUR |
| 17500+ | 0.77 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2070 EPC
Description: TRANS GAN DIE 100V .022OHM, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 1.5mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V.
Weitere Produktangebote EPC2070 nach Preis ab 0.83 EUR bis 3.39 EUR
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EPC2070 | EPC |
Description: TRANS GAN DIE 100V .022OHM Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V Vgs(th) (Max) @ Id: 2.5V @ 1.5mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V |
auf Bestellung 22161 Stücke: Lieferzeit 10-14 Tag (e) |
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EPC2070 | EPC |
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85 |
auf Bestellung 14721 Stücke: Lieferzeit 10-14 Tag (e) |
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| EPC2070 |
|
Hersteller: EPC
Description: TRANS GAN DIE 100V .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
Description: TRANS GAN DIE 100V .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 3A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1.5mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 386 pF @ 50 V
auf Bestellung 22161 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| EPC2070 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
GaN FETs EPC eGaN FET,100 V, 23 milliohm at 5 V, BGA 1.3 x 0.85
auf Bestellung 14721 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.39 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.04 EUR |
| 2500+ | 0.93 EUR |
| 5000+ | 0.83 EUR |