EPC2071
Hersteller: EPC
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Produktrezensionen
Produktbewertung abgeben
Technische Details EPC2071 EPC
Description: TRANS GAN 100V .0022OHM 21BMPD, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Ta), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V, Vgs(th) (Max) @ Id: 2.5V @ 13mA, Supplier Device Package: Die, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): +6V, -4V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50.
Weitere Produktangebote EPC2071 nach Preis ab 5.81 EUR bis 13.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
EPC2071 | EPC |
Description: TRANS GAN 100V .0022OHM 21BMPD Packaging: Cut Tape (CT) Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: GaNFET (Gallium Nitride) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Ta) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V Vgs(th) (Max) @ Id: 2.5V @ 13mA Supplier Device Package: Die Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): +6V, -4V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50 |
auf Bestellung 14536 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
EPC2071 | EPC |
GaN FETs EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3 |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
|
| EPC2071 |
|
Hersteller: EPC
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Description: TRANS GAN 100V .0022OHM 21BMPD
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3931 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 14536 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.17 EUR |
| 10+ | 8.92 EUR |
| 100+ | 6.74 EUR |
| EPC2071 |
|
Hersteller: EPC
GaN FETs EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3
GaN FETs EPC eGaN FET,100 V, 2.2 milliohm at 5 V, LGA 4.45 x 2.3
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.36 EUR |
| 10+ | 9.07 EUR |
| 100+ | 6.85 EUR |
| 1000+ | 5.81 EUR |