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EPC2101

EPC2101

EPC2101_datasheet.pdf Hersteller: EPC
Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.66 EUR
10+ 13.42 EUR
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Technische Details EPC2101 EPC

Description: GANFET 2N-CH 60V 9.5A/38A DIE, Packaging: Tape & Reel (TR), Package / Case: Die, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A, Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V, Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V, Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V, Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA, Supplier Device Package: Die, Part Status: Active.

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EPC2101 EPC2101 Hersteller : EPC EPC2101_datasheet.pdf Description: GANFET 2N-CH 60V 9.5A/38A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9.5A, 38A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 30V, 1200pF @ 30V
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 5V, 2.7mOhm @ 20A, 5V
Gate Charge (Qg) (Max) @ Vgs: 2.7nC @ 5V, 12nC @ 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA
Supplier Device Package: Die
Part Status: Active
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